IXTK90N25L2
IXYS
IXYS
MOSFET N-CH 250V 90A TO264
$35.52
Available to order
Reference Price (USD)
1+
$24.06000
25+
$20.45120
100+
$19.00740
500+
$16.84200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the IXTK90N25L2 by IXYS, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IXTK90N25L2 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 960W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264 (IXTK)
- Package / Case: TO-264-3, TO-264AA
Related Products
STMicroelectronics
STF12N50M2
Rohm Semiconductor
2SK3541T2L
Panjit International Inc.
PJQ5465A_R2_00001
Goford Semiconductor
60N06
Fairchild Semiconductor
FDB2570
onsemi
NVMFS5C430NAFT1G
STMicroelectronics
STI33N60M6
Toshiba Semiconductor and Storage
TK56E12N1,S1X
IXYS
IXTA300N04T2-7
onsemi