IXTP140N055T2
IXYS
IXYS
MOSFET N-CH 55V 140A TO220AB
$4.92
Available to order
Reference Price (USD)
50+
$3.21760
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXTP140N055T2 by IXYS is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose IXYS for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Infineon Technologies
SPI08N50C3XKSA1
STMicroelectronics
STD30NF06LT4
IXYS
IXTA06N120P-TRL
Panjit International Inc.
PJA3449-AU_R1_000A1
Nexperia USA Inc.
PMPB27EP,115
Vishay Siliconix
SUD20N10-66L-GE3
Infineon Technologies
BSZ028N04LSATMA1
Infineon Technologies
IPB180P04P403ATMA1
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJL3401A-F2-0000HF
onsemi