IXTT2N300P3HV
IXYS
IXYS
MOSFET N-CH 3000V 2A TO268
$50.69
Available to order
Reference Price (USD)
1+
$37.00000
30+
$31.45000
120+
$29.23000
Exquisite packaging
Discount
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Optimize your power electronics with the IXTT2N300P3HV single MOSFET from IXYS. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IXTT2N300P3HV combines cutting-edge technology with IXYS's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 3000 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 21Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 520W (Tc)
- Operating Temperature: -55°C ~ 155°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268HV (IXTT)
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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