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RHU002N06T106

Rohm Semiconductor
RHU002N06T106 Preview
Rohm Semiconductor
MOSFET N-CH 60V 200MA UMT3
$0.44
Available to order
Reference Price (USD)
3,000+
$0.06360
6,000+
$0.05724
15,000+
$0.05088
30,000+
$0.04770
75,000+
$0.04452
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: UMT3
  • Package / Case: SC-70, SOT-323

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