IXTU8N70X2
IXYS
IXYS
MOSFET N-CH 700V 8A TO251-3
$4.06
Available to order
Reference Price (USD)
75+
$2.00000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IXTU8N70X2 by IXYS, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IXTU8N70X2 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose IXYS.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251-3
- Package / Case: TO-251-3 Stub Leads, IPak
Related Products
Diodes Incorporated
DMTH10H010LCT
Texas Instruments
TPS1100D
Vishay Siliconix
IRFU9014PBF
Toshiba Semiconductor and Storage
TK290A60Y,S4X
Diodes Incorporated
DMP31D7LT-13
Diodes Incorporated
DMP3010LK3Q-13
Toshiba Semiconductor and Storage
TK22A10N1,S4X
Infineon Technologies
BSC052N08NS5ATMA1
STMicroelectronics
STB7NK80ZT4
Microchip Technology