IXTX120N65X2
IXYS
IXYS
MOSFET N-CH 650V 120A PLUS247-3
$23.63
Available to order
Reference Price (USD)
1+
$17.60000
30+
$14.80000
120+
$13.60000
510+
$11.60000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXTX120N65X2 from IXYS sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to IXYS's IXTX120N65X2 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1250W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247™-3
- Package / Case: TO-247-3 Variant
Related Products
Fairchild Semiconductor
IRFS540A
onsemi
NTD4808NT4G
Microchip Technology
APT50M38JLL
Diodes Incorporated
DMP3097LQ-7
onsemi
NTBG160N120SC1
onsemi
NVMYS025N06CLTWG
Infineon Technologies
IRF40DM229
Panjit International Inc.
PJP8NA65A_T0_00001
STMicroelectronics
STW50N65DM6
Vishay Siliconix