IXXH30N65B4
IXYS
IXYS
IGBT 650V 65A 230W TO247AD
$5.91
Available to order
Reference Price (USD)
1+
$4.65000
10+
$4.14800
30+
$3.73267
120+
$3.40092
270+
$3.06915
510+
$2.75394
1,020+
$2.32260
2,520+
$2.21200
Exquisite packaging
Discount
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Optimize your power systems with the IXXH30N65B4 Single IGBT transistor from IXYS. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IXXH30N65B4 delivers consistent and reliable operation. Trust IXYS's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 65 A
- Current - Collector Pulsed (Icm): 146 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
- Power - Max: 230 W
- Switching Energy: 1.55mJ (on), 480µJ (off)
- Input Type: Standard
- Gate Charge: 52 nC
- Td (on/off) @ 25°C: 32ns/170ns
- Test Condition: 400V, 30A, 15Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXXH)
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