HGTG40N60A4
onsemi
onsemi
IGBT 600V 75A TO247-3
$11.70
Available to order
Reference Price (USD)
1+
$11.79000
10+
$10.84000
450+
$8.70567
900+
$8.14400
Exquisite packaging
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Upgrade your power management systems with the HGTG40N60A4 Single IGBT transistor from onsemi. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the HGTG40N60A4 provides reliable and efficient operation. onsemi's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose HGTG40N60A4 for your critical power needs.
Specifications
- Product Status: Not For New Designs
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 75 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
- Power - Max: 625 W
- Switching Energy: 400µJ (on), 370µJ (off)
- Input Type: Standard
- Gate Charge: 350 nC
- Td (on/off) @ 25°C: 25ns/145ns
- Test Condition: 390V, 40A, 2.2Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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