IGW25T120FKSA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 50A TO247-3
$5.93
Available to order
Reference Price (USD)
1+
$6.27000
10+
$5.67200
240+
$4.71933
720+
$4.07708
1,200+
$3.50128
Exquisite packaging
Discount
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Enhance your electronic projects with the IGW25T120FKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IGW25T120FKSA1 ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IGW25T120FKSA1 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: NPT, Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 75 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
- Power - Max: 190 W
- Switching Energy: 4.2mJ
- Input Type: Standard
- Gate Charge: 155 nC
- Td (on/off) @ 25°C: 50ns/560ns
- Test Condition: 600V, 25A, 22Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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