IXXH60N65B4H1
IXYS
IXYS
IGBT 650V 116A 380W TO247AD
$12.44
Available to order
Reference Price (USD)
1+
$8.40000
10+
$7.56000
30+
$6.88800
120+
$6.21600
270+
$5.71200
510+
$5.20800
1,020+
$4.53600
Exquisite packaging
Discount
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The IXXH60N65B4H1 Single IGBT transistor by IXYS is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IXXH60N65B4H1 ensures precise power control and long-term stability. With IXYS's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IXXH60N65B4H1 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 116 A
- Current - Collector Pulsed (Icm): 230 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
- Power - Max: 380 W
- Switching Energy: 3.13mJ (on), 1.15mJ (off)
- Input Type: Standard
- Gate Charge: 95 nC
- Td (on/off) @ 25°C: 37ns/145ns
- Test Condition: 400V, 60A, 5Ohm, 15V
- Reverse Recovery Time (trr): 150 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXXH)
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