IXYH80N90C3
IXYS
IXYS
IGBT 900V 165A 830W TO247
$11.35
Available to order
Reference Price (USD)
30+
$7.27533
Exquisite packaging
Discount
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Upgrade your power management systems with the IXYH80N90C3 Single IGBT transistor from IXYS. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IXYH80N90C3 provides reliable and efficient operation. IXYS's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IXYH80N90C3 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 900 V
- Current - Collector (Ic) (Max): 165 A
- Current - Collector Pulsed (Icm): 360 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
- Power - Max: 830 W
- Switching Energy: 4.3mJ (on), 1.9mJ (off)
- Input Type: Standard
- Gate Charge: 145 nC
- Td (on/off) @ 25°C: 34ns/90ns
- Test Condition: 450V, 80A, 2Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXTH)
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