IXYN110N120C4
IXYS

IXYS
IGBT 1200V 110A GEN4 XPT SOT227B
$39.37
Available to order
Reference Price (USD)
1+
$39.37000
500+
$38.9763
1000+
$38.5826
1500+
$38.1889
2000+
$37.7952
2500+
$37.4015
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IXYS's IXYN110N120C4 sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the IXYN110N120C4 in your traction inverters or high-energy physics experiments for unparalleled performance. Trust IXYS to deliver cutting-edge IGBT solutions with the IXYN110N120C4 power module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 220 A
- Power - Max: 830 W
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
- Current - Collector Cutoff (Max): 50 µA
- Input Capacitance (Cies) @ Vce: 5.42 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227