IXYX140N120A4
IXYS
IXYS
IGBT 140A 1200V PLUS247
$40.44
Available to order
Reference Price (USD)
1+
$40.44000
500+
$40.0356
1000+
$39.6312
1500+
$39.2268
2000+
$38.8224
2500+
$38.418
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your power management systems with the IXYX140N120A4 Single IGBT transistor from IXYS. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IXYX140N120A4 provides reliable and efficient operation. IXYS's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IXYX140N120A4 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 480 A
- Current - Collector Pulsed (Icm): 1200 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
- Power - Max: 1500 W
- Switching Energy: 4.9mJ (on), 12mJ (off)
- Input Type: Standard
- Gate Charge: 420 nC
- Td (on/off) @ 25°C: 52ns/590ns
- Test Condition: 600V, 70A, 1.5Ohm, 15V
- Reverse Recovery Time (trr): 47 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PLUS247™-3
Related Products
Diodes Incorporated
DGTD65T40S1PT
onsemi
NGTG25N120FL2WG
Infineon Technologies
IKZA75N65RH5XKSA1
onsemi
FGH75T65UPD
STMicroelectronics
STGWA8M120DF3
IXYS
IXYX100N120B3
Renesas Electronics America Inc
RJP30Y2ADPP-MB#T2F
IXYS
IXXX200N60C3
IXYS
IXGH25N250
Infineon Technologies