MIXA450PF1200TSF
IXYS
IXYS
IGBT MOD 1200V 650A 2100W
$168.19
Available to order
Reference Price (USD)
1+
$152.47000
10+
$145.10700
25+
$139.84960
Exquisite packaging
Discount
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Optimize your power systems with IXYS's MIXA450PF1200TSF, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The MIXA450PF1200TSF is particularly effective in high-ambient-temperature environments like steel mill drives. IXYS brings decades of semiconductor expertise to every MIXA450PF1200TSF module.
Specifications
- Product Status: Active
- IGBT Type: PT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 650 A
- Power - Max: 2100 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module