NXH100B120H3Q0SG
onsemi
onsemi
PIM 60-80KW Q0BOOST-L57 1200V, 1
$60.87
Available to order
Reference Price (USD)
1+
$60.87000
500+
$60.2613
1000+
$59.6526
1500+
$59.0439
2000+
$58.4352
2500+
$57.8265
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power systems with onsemi's NXH100B120H3Q0SG, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The NXH100B120H3Q0SG is particularly effective in high-ambient-temperature environments like steel mill drives. onsemi brings decades of semiconductor expertise to every NXH100B120H3Q0SG module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 61 A
- Power - Max: 186 W
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
- Current - Collector Cutoff (Max): 200 µA
- Input Capacitance (Cies) @ Vce: 9.075 nF @ 20 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 22-PIM/Q0BOOST (55x32.5)
Related Products
Infineon Technologies
FS150R12N2T7B15BPSA1
IXYS
IXYN100N65B3D1
Infineon Technologies
FP35R12N2T7BPSA2
Infineon Technologies
FS75R12KT4PB11BPSA1
Infineon Technologies
BSM150GB170DLCE3256HDLA1
Infineon Technologies
FZ1200R12KF5NOSA1
Microchip Technology
APTGT50TL60T3G
Infineon Technologies
F450R12KS4B11BPSA1
Infineon Technologies
FS450R17OP4PBOSA1
onsemi