DDB2U50N08W1RB23BOMA2
Infineon Technologies
Infineon Technologies
IGBT MOD DIODE BRIDGE EASY1B-2-1
$48.29
Available to order
Reference Price (USD)
24+
$67.37958
Exquisite packaging
Discount
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Discover the power of Infineon Technologies's DDB2U50N08W1RB23BOMA2, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The DDB2U50N08W1RB23BOMA2 performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Infineon Technologies's DDB2U50N08W1RB23BOMA2, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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