MJ11015G
onsemi
onsemi
TRANS PNP DARL 120V 30A TO204
$9.31
Available to order
Reference Price (USD)
1+
$7.43000
10+
$6.71500
100+
$5.55930
500+
$4.84100
1,000+
$4.21635
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unmatched performance with the MJ11015G Bipolar Junction Transistor (BJT) by onsemi. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the MJ11015G delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose onsemi for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 30 A
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V
- Power - Max: 200 W
- Frequency - Transition: 4MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204 (TO-3)
Related Products
Toshiba Semiconductor and Storage
2SA1362-GR,LF
Central Semiconductor Corp
CXTA27 TR PBFREE
Diodes Incorporated
DPLS160-7
onsemi
MJ11029G
Diodes Incorporated
FMMT411FDBW-7
onsemi
NSVBC857BLT3G
Nexperia USA Inc.
BC857B,215
onsemi
BC546ABU
onsemi
TIP126G
Nexperia USA Inc.