MJE18002G
onsemi
onsemi
TRANS NPN 450V 2A TO220
$0.54
Available to order
Reference Price (USD)
1+
$0.54000
500+
$0.5346
1000+
$0.5292
1500+
$0.5238
2000+
$0.5184
2500+
$0.513
Exquisite packaging
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Optimize your electronic systems with the MJE18002G Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the MJE18002G delivers superior performance in diverse environments. onsemi's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 450 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
- Power - Max: 50 W
- Frequency - Transition: 13MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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