MSC080SMA120J
Microchip Technology
Microchip Technology
SICFET N-CH 1.2KV 35A SOT227
$26.26
Available to order
Reference Price (USD)
1+
$26.26000
500+
$25.9974
1000+
$25.7348
1500+
$25.4722
2000+
$25.2096
2500+
$24.947
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the MSC080SMA120J by Microchip Technology, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the MSC080SMA120J is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227 (ISOTOP®)
- Package / Case: SOT-227-4, miniBLOC
Related Products
Rectron USA
RM18P100HDE
onsemi
MTB30P06V
onsemi
NVTFS002N04CTAG
Renesas Electronics America Inc
2SK1283-AZ
Vishay Siliconix
SIR401DP-T1-GE3
Microchip Technology
APT8043BLLG
Fairchild Semiconductor
FDU6692
Vishay Siliconix
SI7155DP-T1-GE3
MDD
SI2301S-2.3A
Nexperia USA Inc.