MSCSM120AM31CT1AG
Microchip Technology

Microchip Technology
PM-MOSFET-SIC-SBD~-SP1F
$134.02
Available to order
Reference Price (USD)
1+
$134.02000
500+
$132.6798
1000+
$131.3396
1500+
$129.9994
2000+
$128.6592
2500+
$127.319
Exquisite packaging
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Choose the MSCSM120AM31CT1AG from Microchip Technology for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the MSCSM120AM31CT1AG stands out for its reliability and efficiency. Microchip Technology's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
- Power - Max: 395W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP1F