MT3S113P(TE12L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
RF TRANS NPN 5.3V 7.7GHZ PW-MINI
$0.99
Available to order
Reference Price (USD)
1,000+
$0.42300
2,000+
$0.39480
5,000+
$0.37506
10,000+
$0.35955
25,000+
$0.34968
Exquisite packaging
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Discover the MT3S113P(TE12L,F), a premium RF Bipolar Junction Transistor (BJT) by Toshiba Semiconductor and Storage, part of the Discrete Semiconductor Products lineup. This transistor is engineered for high-frequency applications, delivering outstanding performance in RF amplification and switching. Its advanced design ensures minimal signal loss and high efficiency, making it perfect for use in mobile communication, broadcast equipment, and satellite systems. The MT3S113P(TE12L,F) boasts features like high power gain, low intermodulation distortion, and superior thermal management. Whether you're designing RF amplifiers, oscillators, or mixers, this transistor provides the reliability and performance you need. Choose Toshiba Semiconductor and Storage for cutting-edge RF BJT solutions.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5.3V
- Frequency - Transition: 7.7GHz
- Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
- Gain: 10.5dB
- Power - Max: 1.6W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PW-MINI
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