PBR941,215
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 10V 8GHZ TO236AB
$0.09
Available to order
Reference Price (USD)
3,000+
$0.14383
6,000+
$0.13626
15,000+
$0.12869
30,000+
$0.11961
Exquisite packaging
Discount
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The PBR941,215 RF Bipolar Junction Transistor (BJT) by NXP USA Inc. is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the PBR941,215 is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose NXP USA Inc. for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 1GHz ~ 2GHz
- Gain: -
- Power - Max: 360mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
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