MT3S16U(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
RF TRANS NPN 5V 4GHZ USM
$0.25
Available to order
Reference Price (USD)
3,000+
$0.10080
6,000+
$0.09576
15,000+
$0.09180
30,000+
$0.08928
75,000+
$0.08640
Exquisite packaging
Discount
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The MT3S16U(TE85L,F) RF Bipolar Junction Transistor (BJT) by Toshiba Semiconductor and Storage is a standout in the Discrete Semiconductor Products category. Tailored for high-frequency applications, this transistor provides outstanding amplification with minimal noise. Its robust design ensures reliability in demanding environments, making it ideal for use in RF transceivers, radar systems, and wireless infrastructure. Key features include high gain bandwidth, excellent thermal resistance, and stable operation. Applications extend to automotive, aerospace, and IoT devices. Trust Toshiba Semiconductor and Storage for high-performance RF BJTs that drive technological advancement.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5V
- Frequency - Transition: 4GHz
- Noise Figure (dB Typ @ f): 2.4dB @ 1GHz
- Gain: 4.5dBi
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 1V
- Current - Collector (Ic) (Max): 60mA
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
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