2SA1977-T1B-A
Renesas Electronics America Inc
Renesas Electronics America Inc
PNP TRANSISTOR
$1.83
Available to order
Reference Price (USD)
1+
$1.83000
500+
$1.8117
1000+
$1.7934
1500+
$1.7751
2000+
$1.7568
2500+
$1.7385
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2SA1977-T1B-A by Renesas Electronics America Inc is a premium RF Bipolar Junction Transistor (BJT) in the Discrete Semiconductor Products category. Engineered for high-frequency performance, this transistor provides exceptional gain and low noise, making it ideal for RF and microwave applications. Its advanced construction ensures reliability in harsh environments, suitable for military, aerospace, and medical devices. Key features include high transition frequency, excellent thermal management, and low distortion. Applications range from RF amplifiers to oscillators and mixers. Trust Renesas Electronics America Inc for high-quality RF BJTs that meet the highest industry standards.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8.5GHz
- Noise Figure (dB Typ @ f): 1.5dB @ 1GHz
- Gain: 12dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 8V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT23-3 (TO-236)
Related Products
Infineon Technologies
BFP405FH6327XTSA1
Infineon Technologies
BFP520H6327XTSA1
NXP USA Inc.
BFU550XRR
NTE Electronics, Inc
NTE486
Toshiba Semiconductor and Storage
MT3S113P(TE12L,F)
Infineon Technologies
BFP842ESDH6327XTSA1
Renesas Electronics America Inc
2SC4228-T1-A
NXP USA Inc.
PBR941,215
NXP USA Inc.
BFU730LXZ
Infineon Technologies