BFU520XAR
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143B
$0.47
Available to order
Reference Price (USD)
3,000+
$0.15200
6,000+
$0.14400
15,000+
$0.13600
30,000+
$0.12640
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing the BFU520XAR, a high-performance RF Bipolar Junction Transistor (BJT) from NXP USA Inc., designed for the Discrete Semiconductor Products market. This transistor excels in RF amplification, offering high linearity and low phase noise. Its versatile design makes it suitable for a wide range of applications, including cellular base stations, satellite communication, and RF test equipment. The BFU520XAR features high power gain, excellent thermal performance, and long-term durability. Whether you're working on consumer electronics or industrial systems, this transistor delivers unmatched performance. Rely on NXP USA Inc. for top-tier RF BJT solutions.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 10.5GHz
- Noise Figure (dB Typ @ f): 0.7dB @ 900MHz
- Gain: 20dB
- Power - Max: 450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143B
Related Products
Renesas Electronics America Inc
2SA1977-T1B-A
Infineon Technologies
BFP405FH6327XTSA1
Infineon Technologies
BFP520H6327XTSA1
NXP USA Inc.
BFU550XRR
NTE Electronics, Inc
NTE486
Toshiba Semiconductor and Storage
MT3S113P(TE12L,F)
Infineon Technologies
BFP842ESDH6327XTSA1
Renesas Electronics America Inc
2SC4228-T1-A
NXP USA Inc.
PBR941,215
NXP USA Inc.