MWI100-12A8
IXYS
IXYS
IGBT MODULE 1200V 160A 640W E3
$211.53
Available to order
Reference Price (USD)
5+
$155.51200
Exquisite packaging
Discount
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Optimize your power systems with IXYS's MWI100-12A8, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The MWI100-12A8 is particularly effective in high-ambient-temperature environments like steel mill drives. IXYS brings decades of semiconductor expertise to every MWI100-12A8 module.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 160 A
- Power - Max: 640 W
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
- Current - Collector Cutoff (Max): 6.3 mA
- Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E3
- Supplier Device Package: E3
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