NESG2030M04-A
CEL
CEL
RF TRANS NPN 2.3V 60GHZ M04
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Enhance your RF designs with the NESG2030M04-A, a high-efficiency Bipolar Junction Transistor (BJT) from CEL. As part of the Discrete Semiconductor Products family, this transistor is tailored for RF applications, providing superior amplification and signal integrity. Its high-frequency performance and low distortion make it suitable for use in TV tuners, wireless microphones, and RF identification systems. The NESG2030M04-A features high current gain, excellent thermal characteristics, and long-term reliability. Whether for commercial or industrial use, this transistor delivers consistent results. Trust CEL for high-quality RF BJTs that meet the toughest demands.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 2.3V
- Frequency - Transition: 60GHz
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.1dB @ 2GHz
- Gain: 16dB
- Power - Max: 80mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 5mA, 2V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-343F
- Supplier Device Package: M04
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