NESG2031M05-T1-A
Renesas Electronics America Inc
Renesas Electronics America Inc
NESG2031 - NPN SIGE RF TRANSISTO
$0.53
Available to order
Reference Price (USD)
1+
$0.53000
500+
$0.5247
1000+
$0.5194
1500+
$0.5141
2000+
$0.5088
2500+
$0.5035
Exquisite packaging
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The NESG2031M05-T1-A by Renesas Electronics America Inc is a premium RF Bipolar Junction Transistor (BJT) in the Discrete Semiconductor Products category. Engineered for high-frequency performance, this transistor provides exceptional gain and low noise, making it ideal for RF and microwave applications. Its advanced construction ensures reliability in harsh environments, suitable for military, aerospace, and medical devices. Key features include high transition frequency, excellent thermal management, and low distortion. Applications range from RF amplifiers to oscillators and mixers. Trust Renesas Electronics America Inc for high-quality RF BJTs that meet the highest industry standards.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5V
- Frequency - Transition: 25GHz
- Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 2GHz ~ 5.2GHz
- Gain: 10dB ~ 17dB
- Power - Max: 175mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 5mA, 2V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SOT-343F
- Supplier Device Package: M05
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