NGTB40N120IHRWG
onsemi
onsemi
IGBT 1200V 80A 384W TO247
$5.82
Available to order
Reference Price (USD)
1+
$5.20000
30+
$4.41800
120+
$3.82883
510+
$3.25941
1,020+
$2.74890
Exquisite packaging
Discount
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Enhance your electronic projects with the NGTB40N120IHRWG Single IGBT transistor from onsemi. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the NGTB40N120IHRWG ensures precision and reliability. onsemi's cutting-edge technology guarantees a component that meets the highest industry standards. Choose NGTB40N120IHRWG for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 40A
- Power - Max: 384 W
- Switching Energy: 950µJ (off)
- Input Type: Standard
- Gate Charge: 225 nC
- Td (on/off) @ 25°C: -/230ns
- Test Condition: 600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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