STGWA100H65DFB2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP, 650 V, 1
$7.20
Available to order
Reference Price (USD)
1+
$7.20000
500+
$7.128
1000+
$7.056
1500+
$6.984
2000+
$6.912
2500+
$6.84
Exquisite packaging
Discount
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Enhance your electronic projects with the STGWA100H65DFB2 Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the STGWA100H65DFB2 ensures precision and reliability. STMicroelectronics's cutting-edge technology guarantees a component that meets the highest industry standards. Choose STGWA100H65DFB2 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 145 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
- Power - Max: 441 W
- Switching Energy: 2.2mJ (on), 1.4mJ (off)
- Input Type: Standard
- Gate Charge: 288 nC
- Td (on/off) @ 25°C: 30ns/130ns
- Test Condition: 400V, 100A, 2.2Ohm, 15V
- Reverse Recovery Time (trr): 123 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 Long Leads
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