NJL4281DG
onsemi
onsemi
TRANS NPN 350V 15A TO264
$2.94
Available to order
Reference Price (USD)
1+
$2.94000
500+
$2.9106
1000+
$2.8812
1500+
$2.8518
2000+
$2.8224
2500+
$2.793
Exquisite packaging
Discount
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Upgrade your electronic designs with the NJL4281DG Bipolar Junction Transistor (BJT) by onsemi. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the NJL4281DG is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust onsemi for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN + Diode (Isolated)
- Current - Collector (Ic) (Max): 15 A
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 8A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5A, 5V
- Power - Max: 230 W
- Frequency - Transition: 35MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-5
- Supplier Device Package: TO-264
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