NSVF6003SB6T1G
onsemi
onsemi
RF TRANS NPN 12V 7GHZ 6CPH
$0.28
Available to order
Reference Price (USD)
3,000+
$0.26180
6,000+
$0.24480
15,000+
$0.23630
30,000+
$0.22780
Exquisite packaging
Discount
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Discover the NSVF6003SB6T1G, a cutting-edge RF Bipolar Junction Transistor (BJT) from onsemi, part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The NSVF6003SB6T1G features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose onsemi for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 7GHz
- Noise Figure (dB Typ @ f): 3dB @ 1GHz
- Gain: 9dB
- Power - Max: 800mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
- Current - Collector (Ic) (Max): 150mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-CPH
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