NSVIMD10AMT1G
onsemi
onsemi
SURF MT BIASED RES XSTR
$0.49
Available to order
Reference Price (USD)
3,000+
$0.11286
6,000+
$0.10688
15,000+
$0.09790
30,000+
$0.09191
75,000+
$0.08493
Exquisite packaging
Discount
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The NSVIMD10AMT1G from onsemi is a high-performance Bipolar Junction Transistor (BJT) Array designed for precision applications. This pre-biased transistor array integrates multiple BJTs in a compact package, offering excellent thermal stability and consistent performance. Ideal for amplification and switching circuits, the NSVIMD10AMT1G ensures low noise and high gain, making it a reliable choice for industrial and consumer electronics. Common applications include motor control, LED drivers, and audio amplifiers. With robust construction and advanced manufacturing techniques, onsemi's NSVIMD10AMT1G delivers unmatched reliability in demanding environments.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 13kOhms, 130Ohms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 68 @ 100mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 285mW
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SC-74R
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