NSVMUN5336DW1T1G
onsemi
onsemi
COMPLEMENTARY DIGITAL TRA
$0.13
Available to order
Reference Price (USD)
3,000+
$0.09999
Exquisite packaging
Discount
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Upgrade your electronic designs with the NSVMUN5336DW1T1G by onsemi, a pre-biased BJT array engineered for efficiency and durability. This discrete semiconductor product features matched transistors with built-in bias resistors, simplifying circuit design and reducing component count. Perfect for space-constrained applications, the NSVMUN5336DW1T1G excels in automotive systems, power management modules, and communication devices. onsemi's commitment to quality ensures that each transistor array meets stringent performance standards, providing stable operation across a wide temperature range. Choose NSVMUN5336DW1T1G for superior signal processing and energy-efficient performance.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 100kOhms
- Resistor - Emitter Base (R2): 100kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 187mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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