NTBG015N065SC1
onsemi
onsemi
SILICON CARBIDE MOSFET, NCHANNEL
$40.96
Available to order
Reference Price (USD)
1+
$40.96000
500+
$40.5504
1000+
$40.1408
1500+
$39.7312
2000+
$39.3216
2500+
$38.912
Exquisite packaging
Discount
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Meet the NTBG015N065SC1 by onsemi, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The NTBG015N065SC1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose onsemi.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
- Vgs(th) (Max) @ Id: 4.3V @ 25mA
- Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
- Vgs (Max): +22V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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