NTD4857N-1G
onsemi
onsemi
MOSFET N-CH 25V 12A/78A IPAK
$0.22
Available to order
Reference Price (USD)
1+
$0.22000
500+
$0.2178
1000+
$0.2156
1500+
$0.2134
2000+
$0.2112
2500+
$0.209
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NTD4857N-1G from onsemi sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to onsemi's NTD4857N-1G for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 1.31W (Ta), 56.6W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
IXYS
IXFA18N60X
Nexperia USA Inc.
PSMN016-100YS,115
Alpha & Omega Semiconductor Inc.
AOT2610L
NXP Semiconductors
PHB29N08T,118
Toshiba Semiconductor and Storage
TK065U65Z,RQ
Infineon Technologies
BSZ146N10LS5ATMA1
Vishay Siliconix
IRFR120TRLPBF
Alpha & Omega Semiconductor Inc.
AOTF2610L
onsemi
FDB0300N1007L
Nexperia USA Inc.