NTE2930
NTE Electronics, Inc
NTE Electronics, Inc
MOSFET N-CHANNEL 100V 31A TO3PML
$8.79
Available to order
Reference Price (USD)
1+
$8.79000
500+
$8.7021
1000+
$8.6142
1500+
$8.5263
2000+
$8.4384
2500+
$8.3505
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the NTE2930 by NTE Electronics, Inc, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The NTE2930 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose NTE Electronics, Inc.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 40mOhm @ 15.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PML
- Package / Case: TO-3P-3 Full Pack
Related Products
Fairchild Semiconductor
SSI4N60BTU
Toshiba Semiconductor and Storage
TPN2R304PL,L1Q
NXP USA Inc.
BUK9107-55ATE,118
IXYS
IXTA1N100P-TRL
IXYS
IXTA02N250HV-TRL
Vishay Siliconix
SIHLR120-GE3
Nexperia USA Inc.
PSMN4R3-40MLHX
Diodes Incorporated
DMTH10H2M5STLWQ-13
IXYS
IXFA34N65X2-TRL
onsemi