NTE319
NTE Electronics, Inc
NTE Electronics, Inc
RF TRANS NPN 20V TO72
$1.60
Available to order
Reference Price (USD)
1+
$1.60000
500+
$1.584
1000+
$1.568
1500+
$1.552
2000+
$1.536
2500+
$1.52
Exquisite packaging
Discount
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The NTE319 by NTE Electronics, Inc is a state-of-the-art RF Bipolar Junction Transistor (BJT) that stands out in the Discrete Semiconductor Products category. Designed for high-frequency applications, this transistor offers exceptional linearity and low noise, making it ideal for RF amplification. Its compact design and high power handling capability ensure reliable performance in critical applications such as base stations, military communication, and medical devices. Key attributes include high gain bandwidth, excellent thermal resistance, and stable operation under varying conditions. Upgrade your RF circuits with the NTE319 from NTE Electronics, Inc, a leader in semiconductor innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): 2.7dB @ 45MHz
- Gain: 29dB
- Power - Max: 175mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2mA, 10V
- Current - Collector (Ic) (Max): -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AF, TO-72-4 Metal Can
- Supplier Device Package: TO-72
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