NTE38
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP 350V 2A TO66
$8.88
Available to order
Reference Price (USD)
1+
$8.88000
500+
$8.7912
1000+
$8.7024
1500+
$8.6136
2000+
$8.5248
2500+
$8.436
Exquisite packaging
Discount
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Discover the NTE38 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the NTE38 is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose NTE Electronics, Inc for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 125mA, 1A
- Current - Collector Cutoff (Max): 5mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 4V
- Power - Max: 35 W
- Frequency - Transition: 20MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66
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