NTH4L040N120SC1
onsemi
onsemi
SICFET N-CH 1200V 58A TO247-4
$31.62
Available to order
Reference Price (USD)
1+
$31.62000
500+
$31.3038
1000+
$30.9876
1500+
$30.6714
2000+
$30.3552
2500+
$30.039
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the NTH4L040N120SC1 single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's NTH4L040N120SC1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
- Vgs (Max): +25V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 319W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
Related Products
Vishay Siliconix
SI3443CDV-T1-GE3
NTE Electronics, Inc
NTE67
NTE Electronics, Inc
NTE2931
Rohm Semiconductor
SCT3030KLHRC11
STMicroelectronics
STY60NM50
onsemi
FCH47N60-F133
Rohm Semiconductor
RQ3E100BNTB
onsemi
FDS86140
Microchip Technology
APT34F60S
Vishay Siliconix