NTHD4P02FT1G
onsemi
onsemi
MOSFET P-CH 20V 2.2A CHIPFET
$0.31
Available to order
Reference Price (USD)
3,000+
$0.18380
6,000+
$0.17194
15,000+
$0.16008
30,000+
$0.15178
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NTHD4P02FT1G from onsemi sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to onsemi's NTHD4P02FT1G for their critical applications.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.2A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 155mOhm @ 2.2A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 1.1W (Tj)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: ChipFET™
- Package / Case: 8-SMD, Flat Lead
Related Products
Infineon Technologies
IRFP4137PBF
NXP USA Inc.
BUK6217-55C,118
onsemi
MMFT2N25ET3
STMicroelectronics
STL86N3LLH6AG
onsemi
FDC5612
NXP USA Inc.
PMG85XP,115
Vishay Siliconix
SI6423DQ-T1-BE3
onsemi
FDMS7682
Vishay Siliconix
SQ2319ADS-T1_GE3
Fairchild Semiconductor