NVBG020N090SC1
onsemi
onsemi
SICFET N-CH 900V 9.8A/112A D2PAK
$34.78
Available to order
Reference Price (USD)
1+
$34.78000
500+
$34.4322
1000+
$34.0844
1500+
$33.7366
2000+
$33.3888
2500+
$33.041
Exquisite packaging
Discount
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Optimize your power electronics with the NVBG020N090SC1 single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the NVBG020N090SC1 combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 112A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V
- Vgs(th) (Max) @ Id: 4.3V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 15 V
- Vgs (Max): +19V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 477W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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