NVH4L160N120SC1
onsemi
onsemi
SICFET N-CH 1200V 17.3A TO247
$5.75
Available to order
Reference Price (USD)
1+
$5.75264
500+
$5.6951136
1000+
$5.6375872
1500+
$5.5800608
2000+
$5.5225344
2500+
$5.465008
Exquisite packaging
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Upgrade your designs with the NVH4L160N120SC1 by onsemi, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the NVH4L160N120SC1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
- Vgs (Max): +25V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 111W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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