NXH450B100H4Q2F2SG
onsemi
onsemi
1000V,75A FSIII IGBT, MID SPEED
$126.96
Available to order
Reference Price (USD)
1+
$126.96000
500+
$125.6904
1000+
$124.4208
1500+
$123.1512
2000+
$121.8816
2500+
$120.612
Exquisite packaging
Discount
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onsemi's NXH450B100H4Q2F2SG sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the NXH450B100H4Q2F2SG in your traction inverters or high-energy physics experiments for unparalleled performance. Trust onsemi to deliver cutting-edge IGBT solutions with the NXH450B100H4Q2F2SG power module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1000 V
- Current - Collector (Ic) (Max): 101 A
- Power - Max: 234 W
- Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 150A
- Current - Collector Cutoff (Max): 600 µA
- Input Capacitance (Cies) @ Vce: 9.342 nF @ 20 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 56-PIM (93x47)
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