NXH75M65L4Q1SG
onsemi
onsemi
Q1PACK 75A 650V
$58.82
Available to order
Reference Price (USD)
1+
$58.82333
500+
$58.2350967
1000+
$57.6468634
1500+
$57.0586301
2000+
$56.4703968
2500+
$55.8821635
Exquisite packaging
Discount
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Experience next-generation power control with onsemi's NXH75M65L4Q1SG IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The NXH75M65L4Q1SG offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the NXH75M65L4Q1SG in your next-generation HVDC systems or particle accelerator power supplies. onsemi delivers reliability where it matters most with the NXH75M65L4Q1SG IGBT module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 59 A
- Power - Max: 86 W
- Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 75A
- Current - Collector Cutoff (Max): 300 µA
- Input Capacitance (Cies) @ Vce: 5.665 nF @ 30 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 27-PIM (71x37.4)
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