PBHV8115Z,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS NPN 150V 1A SOT223
$0.58
Available to order
Reference Price (USD)
1,000+
$0.21450
2,000+
$0.19800
5,000+
$0.18700
10,000+
$0.18150
Exquisite packaging
Discount
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The PBHV8115Z,115 Bipolar Junction Transistor (BJT) from Nexperia USA Inc. is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the PBHV8115Z,115 is a reliable component for demanding applications. Nexperia USA Inc.'s dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 150 V
- Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 1A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
- Power - Max: 1.4 W
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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