PBRN113ET,215
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS NPN 250MW TO236AB
$0.38
Available to order
Reference Price (USD)
3,000+
$0.06375
6,000+
$0.05625
15,000+
$0.04875
30,000+
$0.04625
75,000+
$0.04375
150,000+
$0.04125
Exquisite packaging
Discount
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Upgrade your designs with Nexperia USA Inc.'s PBRN113ET,215, a pre-biased BJT transistor engineered for efficiency. This single bipolar transistor features optimized current gain and minimal leakage, perfect for low-power circuits. Its compact package suits space-constrained applications like IoT devices, automotive modules, and power management systems. Nexperia USA Inc. delivers superior discrete semiconductor solutions meeting rigorous industry standards for durability and performance.
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Resistor - Base (R1): 1 kOhms
- Resistor - Emitter Base (R2): 1 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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