PDTB113ZT,215
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS PNP 50V TO236AB
$0.33
Available to order
Reference Price (USD)
3,000+
$0.07625
6,000+
$0.06728
15,000+
$0.05831
30,000+
$0.05532
75,000+
$0.05233
150,000+
$0.04934
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the PDTB113ZT,215 Nexperia USA Inc.'s answer to modern circuit design challenges. This pre-biased bipolar transistor combines 2N3904 compatibility with enhanced thermal characteristics. Key applications include: Electric vehicle charging stations Industrial IoT gateways Smart meter modules With 100% automated production testing, each unit delivers military-grade reliability for critical infrastructure projects.
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 1 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: -
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
Related Products
Nexperia USA Inc.
PDTC144TT,215
Nexperia USA Inc.
PDTB123YQAZ
Rohm Semiconductor
DTA143ECAHZGT116
Infineon Technologies
BCR185E6327HTSA1
Toshiba Semiconductor and Storage
RN1103MFV,L3XHF(CT
Infineon Technologies
BCR129FE6327
Rohm Semiconductor
DTA014TMT2L
Toshiba Semiconductor and Storage
RN2102,LF(CT
onsemi
DTC114YET1G
Rohm Semiconductor