PDTC123TT,215
NXP USA Inc.
NXP USA Inc.
NOW NEXPERIA PDTC123TT - SMALL S
$0.02
Available to order
Reference Price (USD)
3,000+
$0.03304
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
NXP USA Inc. presents the PDTC123TT,215 a game-changer in pre-biased transistor technology. The device's thermal shutdown protection and 5kV ESD rating make it perfect for harsh environments like oil/gas monitoring and agricultural machinery. Its 1.5V low saturation voltage enhances energy efficiency in portable electronics and wearables.
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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