PJD4NA50A_L2_00001
Panjit International Inc.
Panjit International Inc.
500V N-CHANNEL MOSFET
$0.62
Available to order
Reference Price (USD)
1+
$0.62000
500+
$0.6138
1000+
$0.6076
1500+
$0.6014
2000+
$0.5952
2500+
$0.589
Exquisite packaging
Discount
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Discover the PJD4NA50A_L2_00001 from Panjit International Inc., a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the PJD4NA50A_L2_00001 ensures reliable performance in demanding environments. Upgrade your circuit designs with Panjit International Inc.'s cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 449 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 78W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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